Pin configuration (Pinout) of the BD139

The BD139 from STMicroelectronics could be a through hole NPN complementary low voltage semiconductor unit in TO-126 (SOT-32) package. This device factory-made in epitaxial flattened technology.

Characteristics of the BD139 Bipolar Transistor

  • Type Designator: BD135
  • Polarity: NPN
  • Material of Transistor: Si
  • Collector Power Dissipation (Pc): 12.5 W
  • Collector Current |Ic max|: 1.5 A
  • Collector-Base Voltage|Vcb|: 100 V
  • Collector-Emitter Voltage|Vce|: 80 V
  • Emitter-Base Voltage |Veb|: 5 V
  • Operating Junction Temperature (Tj): -55 to 150 °C
  • Transition Frequency (ft): 50 MHz
  • DC Current Gain (HFE) : 40 to 250
  • Noise Figure, dB: –
  • Package: TO126

BD135 Datasheet (PDF)

The complementary PNP transistor to the BD139 is the BD140.

 

Type Designator: BD135

 

Type Designator: BD135