Pin configuration (Pinout) of the BD139

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Characteristics of the BD139 Bipolar Transistor

  • Type Designator: BD135
  • Polarity: NPN
  • Material of Transistor: Si
  • Collector Power Dissipation (Pc): 12 W
  • Collector Current |Ic max|: 1 A
  • Collector-Base Voltage|Vcb|: 45 V
  • Collector-Emitter Voltage|Vce|: 45 V
  • Emitter-Base Voltage |Veb|: 5 V
  • Operating Junction Temperature (Tj): 150 °C
  • Transition Frequency (ft): 50 MHz
  • DC Current Gain (HFE) : 40
  • Noise Figure, dB: –
  • Package: TO126

BD135 Datasheet (PDF)

Type Designator: BD135

 

Type Designator: BD135