Pin configuration (Pinout) of the BD139

Your content goes here. Edit or remove this text inline or in the module Content settings. You can also style every aspect of this content in the module Design settings and even apply custom CSS to this text in the module Advanced settings.

Characteristics of the BD139 Bipolar Transistor

  • Type Designator: BD135
  • Polarity: NPN
  • Material of Transistor: Si
  • Collector Power Dissipation (Pc): 12 W
  • Collector Current |Ic max|: 1 A
  • Collector-Base Voltage|Vcb|: 45 V
  • Collector-Emitter Voltage|Vce|: 45 V
  • Emitter-Base Voltage |Veb|: 5 V
  • Operating Junction Temperature (Tj): 150 °C
  • Transition Frequency (ft): 50 MHz
  • DC Current Gain (HFE) : 40
  • Noise Figure, dB: –
  • Package: TO126

BD135 Datasheet (PDF)

Type Designator: BD135


Type Designator: BD135